Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes
| Autor: | Mmantsae Diale, M.A. Mayimele, Johan Janse van Rensburg, F.D. Auret |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Equivalent series resistance Schottky barrier Schottky diode Thermionic emission 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Standard deviation Electronic Optical and Magnetic Materials 0103 physical sciences Electrical and Electronic Engineering Ohm 0210 nano-technology Diode |
| Zdroj: | Physica B: Condensed Matter. 480:58-62 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2015.07.034 |
| Popis: | We report on the analysis of current voltage ( I–V ) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T 200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm − 2 K −2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights. |
| Databáze: | OpenAIRE |
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