Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs
| Autor: | Xin Wan, Peide D. Ye, Sharon Cui, Kai Ni, Daniel M. Fleetwood, Robert A. Reed, Sung-Jae Chang, En Xia Zhang, Mengwei Si, Jin Chen, Shufeng Ren, T. P. Ma, Xiao Sun |
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| Rok vydání: | 2015 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Nanowire Dielectric Noise (electronics) Condensed Matter::Materials Science Nuclear Energy and Engineering Absorbed dose Electric field Electronic engineering Optoelectronics Irradiation Electrical and Electronic Engineering Forming gas business Radiation hardening |
| Zdroj: | IEEE Transactions on Nuclear Science. 62:2888-2893 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2015.2497090 |
| Popis: | InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise measurements are carried out to probe near-interfacial oxide-trap (border-trap) densities, and TCAD simulations are performed to assist in understanding the charge trapping in NW channel devices with high-k gate dielectrics. Optimized device structures exhibit high radiation tolerance. |
| Databáze: | OpenAIRE |
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