Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors

Autor: Da-Bin Jeon, Chun-Won Byun, Sung-Min Yoon, Min-Ki Ryu, Jong-Heon Yang, Chi-Sun Hwang
Rok vydání: 2015
Předmět:
Zdroj: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:020602
ISSN: 2166-2754
2166-2746
DOI: 10.1116/1.4906570
Popis: Fully transparent amorphous-InGaZnO thin-film transistors (TFTs) with double-gate (DG) configuration were fabricated. Both top-gate and bottom-gate (BG) TFT fabricated with a single gate-stack structure were found to exhibit sound device characteristics with μsat of 17.0 and 18.1 cm2 V−1 s−1, respectively. Confirmed benefits of DG configuration include improved current drivability and threshold voltage tunability. Further, controlling the fixed voltage bias to the BG was observed to enhance device stability under negative-bias-illumination-stress conditions.
Databáze: OpenAIRE