Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors
Autor: | Da-Bin Jeon, Chun-Won Byun, Sung-Min Yoon, Min-Ki Ryu, Jong-Heon Yang, Chi-Sun Hwang |
---|---|
Rok vydání: | 2015 |
Předmět: |
Materials science
business.industry Process Chemistry and Technology Transistor Negative bias Stability (probability) Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage Stress (mechanics) law Thin-film transistor Materials Chemistry Optoelectronics Double gate Electrical and Electronic Engineering business Instrumentation Voltage |
Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:020602 |
ISSN: | 2166-2754 2166-2746 |
DOI: | 10.1116/1.4906570 |
Popis: | Fully transparent amorphous-InGaZnO thin-film transistors (TFTs) with double-gate (DG) configuration were fabricated. Both top-gate and bottom-gate (BG) TFT fabricated with a single gate-stack structure were found to exhibit sound device characteristics with μsat of 17.0 and 18.1 cm2 V−1 s−1, respectively. Confirmed benefits of DG configuration include improved current drivability and threshold voltage tunability. Further, controlling the fixed voltage bias to the BG was observed to enhance device stability under negative-bias-illumination-stress conditions. |
Databáze: | OpenAIRE |
Externí odkaz: |