Growth of SiC Nanorod Using Tetramethylsilane

Autor:	Jae-Soo Kim, Jae-Woong Yang, Na-Ri Kim, Dongjin Byun, Dae-Ho Rho
Rok vydání:	2003
Předmět:	Morphology (linguistics) Materials science Scanning electron microscope Nanotechnology Substrate (electronics) Growth time chemistry.chemical_compound stomatognathic system chemistry Chemical engineering General Materials Science Nanorod Crystallite Growth rate Tetramethylsilane
Zdroj:	Korean Journal of Materials Research. 13:404~408-404~408
ISSN:	2287-7258 1225-0562
DOI:	10.3740/mrsk.2003.13.6.404
Popis:	SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region`s diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod`s diameter and morphology. With increasing growth time, nanorod`s diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aed7ce7a836d48cf8da47caf78417681 https://doi.org/10.3740/mrsk.2003.13.6.404 Zobrazit plný text záznamu