Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

Autor:	Xin Cao, Zhanping Zhu, Yong Chang, Yiping Zeng, Baoqiang Wang, Liang Pan, Xiaoguang Wang, Meiying Kong, Junhao Chu
Rok vydání:	2001
Předmět:	Inorganic Chemistry Photoluminescence Materials science Condensed matter physics Band gap Ingaas gaas Doping Materials Chemistry Condensed Matter Physics Layer (electronics) Spectral line Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 231:520-524
ISSN:	0022-0248
Popis:	The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aed087a479ed846667bbaca61085fe31 https://doi.org/10.1016/s0022-0248(01)01529-9 Zobrazit plný text záznamu Full Text from ScienceDirect