Controlling void formation in WSi2polycides
| Autor: | C.W. Koburger, H.J. Geipel, M.H. Ishaq, Larry Alan Nesbit |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Thermal oxidation
Void (astronomy) Materials science Silicon chemistry.chemical_element Electronic Optical and Magnetic Materials chemistry.chemical_compound Atomic layer deposition chemistry Electrode Silicide Electronic engineering Polycide Electrical and Electronic Engineering Composite material Layer (electronics) |
| Zdroj: | IEEE Electron Device Letters. 5:166-168 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1984.25871 |
| Popis: | Polycides, composite wiring/electrode films formed by depositing a refractory metal silicide such as WSi 2 , MoSi 2 , or TaSi 2 atop a polysilicon film [1]-[4], are finding their way into IC technologies as low-resistivity electrodes/interconnects. One of the desirable features of polycide composite films is their ability for self-passivation through thermal oxidation. In some cases, however, oxidation of the two-layer materials results in the formation of large "voids" in the polysilicon film (bottom layer in the polycide) [5], [6]. A method for preventing this void formation has been found. The solution involves deposition of a thin silicon layer onto the existing two-layer material. The additional layer is designed to provide some of the silicon required for oxidation during the initial stages of self-passivation. In cases where over 200 nm of SiO 2 were grown atop a WSi 2 polycide, a silicon layer as thin as 15-nm prevented void formation. |
| Databáze: | OpenAIRE |
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