Optical and electrical characterization of Si/Ge superlattices
| Autor: | Hartmut Presting, Erich Kasper, Hermann G. Grimmeiss, V. Nagesh, J. Olajos, Jesper Engvall, H. Kibbel |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Photoluminescence
Silicon Condensed matter physics Superlattice Metals and Alloys chemistry.chemical_element Germanium Surfaces and Interfaces Photoionization Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Space charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry Materials Chemistry Absorption (electromagnetic radiation) Diode |
| Zdroj: | Thin Solid Films. 222:237-242 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(92)90076-n |
| Popis: | Using recent studies of absorption and photoluminescence, different junction space charge techniques have been employed to separate intrinsic signals from extrinsic responses in ultrathin Si/Ge superlattices. The diodes showed good I–V characteristics with ideality factors of about 2 and a reverse current of about 10 −11 A for voltages less than 1 V. The extrinsic photoionization cross-section spectrum exhibited oscillatory properties which are discussed in terms of Wannier-Stark localization. |
| Databáze: | OpenAIRE |
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