Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast ID Measurement

Autor:	S. Nara, H. Toyoda, K. Yamazaki, Y. Yamashita, K. Arai, Y. Yamamoto, K. Hisada, T. Okunishi
Rok vydání:	2016
Předmět:	Positive bias temperature instability Materials science Condensed matter physics Reliability study
Zdroj:	Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2016.e-1-04
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aebab332ae9a658dd34d849c31341178 https://doi.org/10.7567/ssdm.2016.e-1-04 Zobrazit plný text záznamu