Improvement of Planar GaAs Devices by Controlling the Properties of the Epilayer and the Epilayer-Substrate Interface

Autor:	Leon Marcel Freddy Kaufmann, Klaus Heime
Rok vydání:	1977
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Schottky diode Substrate (electronics) Electron Integrated circuit Epitaxy law.invention Planar law Optoelectronics business Microwave DC bias
Zdroj:	Japanese Journal of Applied Physics. 16:107
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjaps.16s1.107
Popis:	In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers ("active" layers) are grown epitaxially onto a semi insulating substrate, either by liquid phase (LPE) or vapor-phase epitaxy (VPE). In our work liquid-phase growth was used, only. One of the major problems not yet overcome successfully is the deterioration of device parameters deduced from pulse bias measurements, if the devices are operated under dc bias conditions. In this paper the reasons for the deterioration as well as some means of avoiding it will be described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aeb7d1beed0d4bb4be51ef4b5c99c601 https://doi.org/10.7567/jjaps.16s1.107 Zobrazit plný text záznamu