Compact and high‐linearity 77 GHz CMOS receiver front‐end for automotive radar
| Autor: | Dongfang Pan, Liguo Sun, Ping Gui, Zongming Daun |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Physics Silicon business.industry Amplifier Local oscillator 020208 electrical & electronic engineering Bandwidth (signal processing) Electrical engineering Linearity chemistry.chemical_element 02 engineering and technology 01 natural sciences Low-noise amplifier chemistry CMOS Control and Systems Engineering Balun 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering business |
| Zdroj: | IET Circuits, Devices & Systems. 13:1203-1208 |
| ISSN: | 1751-8598 1751-858X |
| Popis: | This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1–9.1 dB over the frequency range of 68.9–80.2 GHz, an NF of 7.8–9.1 dB over the range of 76–81 GHz, and LO-radio frequency isolation of 55–60 dB over 60–90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V. |
| Databáze: | OpenAIRE |
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