340 GHz lens‐coupled 4 × 4 GaAs detector array for terahertz imaging applications
| Autor: | Mingxun Li, Haidong Qiao, Dalu Guo, Haidong Hao, Zhaohui Ma, Xin Lv, Jinchao Mou |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Terahertz radiation 020208 electrical & electronic engineering Schottky diode 020206 networking & telecommunications 02 engineering and technology law.invention Gallium arsenide Lens (optics) chemistry.chemical_compound Responsivity Planar chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics High Energy Physics::Experiment Electrical and Electronic Engineering Antenna (radio) business Noise-equivalent power |
| Zdroj: | Electronics Letters. 54:1180-1182 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2018.5856 |
| Popis: | A 340 GHz 4 × 4 detector array based on 0.18 µm gallium arsenide technology is presented. Each pixel is composed of a planar log-periodic antenna, a Schottky barrier diode, and a pair of bonding pads. The detector array is mounted on a silicon lens and assembled onto a PCB using the authors’ novel flip-chip structure. Off-axis performances of the lens-coupled detector array are demonstrated experimentally, which agree well with the simulated ones. The detector array shows a peak voltage responsivity of 1347 V/W and a noise equivalent power of 2.1 pW/Hz1/2 at 340 GHz, exhibiting much better performance than the CMOS counterpart. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text