| Autor: |
Alexandr Dmitrievich Roenkov, Yu. A. Vodakov, Yu.N. Makarov, J.S. Barash, S. Yu. Karpov, I.D. Matukov, Heikki Helava, Ramm, E. N. Mokhov, M.G. Ramm, D.Kh. Ofengeim, D.S. Kalinin, M.V. Bogdanov |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :63-66 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.457-460.63 |
| Popis: |
In this paper, we suggest a model of facet formation during bulk SiC growth by Physical Vapor Transport (PVT). The model considers the step-flow growth, with the step density dependent on the local orientation of the crystallization front with respect to the close-packed crystal planes. The growth kinetics employs the Burton-Cabrera-Frank approach extended to binary compounds and a multi-component vapor. Being implemented into a 2D simulator, the model is applied to analysis of faceting in free-spreading bulk SiC growth. The computations predict the crystal shapes very similar to those observed experimentally. The faceting influence on the overall crystal growth rate is discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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