NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films

Autor:	Yu-Hsien Lin, Tung-Huan Chou, Hsin-Chiang You, Tien-Sheng Chao, Jay-Chi Chou
Rok vydání:	2012
Předmět:	Materials science Passivation business.industry technology industry and agriculture Plasma Flash memory Flash (photography) Thin-film transistor parasitic diseases Optoelectronics Thin film business Quantum tunnelling AND gate
Zdroj:	2012 International Symposium on Computer, Consumer and Control.
DOI:	10.1109/is3c.2012.212
Popis:	In this paper, we fabricated the poly-SiiVoxideiVnitrideiVoxideiVsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aeaa21318e6c9447ae5b7a6e404fc3dd https://doi.org/10.1109/is3c.2012.212 Zobrazit plný text záznamu