Trends in Dopant Incorporation for 3C-SiC Films on Silicon

Autor:	Bernard Boyer, Marcin Zielinski, André Leycuras, Marc Portail, Hervé Peyre, Jean Camassel, Thierry Chassagne, S. Ndiaye
Rok vydání:	2007
Předmět:	Materials science Silicon Dopant Mechanical Engineering Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Nitrogen Secondary ion mass spectrometry chemistry Mechanics of Materials Aluminium General Materials Science Wafer Growth rate
Zdroj:	Materials Science Forum. :207-210
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.556-557.207
Popis:	We have investigated the influence of several growth parameters on the incorporation of doping species in the case of 3C-SiC layers grown by CVD on silicon. This includes nitrogen (both intentional and residual) as well as residual aluminum. All concentrations have been determined by SIMS (Secondary Ion Mass Spectrometry). First, we investigated the effect of the growth temperature, growth rate and C/Si ratio on the doping level of (100) oriented layers. Then, we compared the change in nitrogen incorporation versus nitrogen flow rate for layers grown on (100), (111), (110) and (211) oriented wafers.
Databáze:	OpenAIRE
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