Comparison of the multi-gate functionality of screen-grid field effect transistors with finFETs
| Autor: | Kristel Fobelets, J.E. Velazquez-Perez, Yasaman Shadrokh |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Pass transistor logic
business.industry Computer science Electrical engineering NAND gate Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Electronic Optical and Magnetic Materials Switching time Logic gate Rise time Hardware_INTEGRATEDCIRCUITS Materials Chemistry Inverter Field-effect transistor Electrical and Electronic Engineering business XOR gate |
| Zdroj: | Semiconductor Science and Technology. 23:095006 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Two-dimensional (2D) technology computer-aided design (TCAD) is used to analyze and compare the multi-gate digital performance of the screen-grid field effect transistor (SGrFET) with a finFET. The switching speed of the all-n-type inverter is ten times faster for the n-SGrFET than for the n-finFET, while the noise margins are ∼400 mV for a 1 V supply for both devices. The performance of the complementary inverter is similar for both devices. The multi-gate functionality of both devices is exploited to minimize the device count for NAND, NOR and XOR gates. The SGrFET XOR contains only two devices while three are needed for the finFET. The rise time of the SGrFET logic gates is found to be almost half of that of the finFET. Complete OFF states can be obtained for the SGrFET via the multiple unit cell approach. |
| Databáze: | OpenAIRE |
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