The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures

Autor: null Egorov A.Yu., null Zhukov A.E., null Kryzhanovskaya N. V., null Denisov D.V., null Shernyakov Yu. M., null Karachinsky L. Ya., null Babichev A. V., null Andryushkin V. V., null Gladyshev A. G., null Nyapshaev I.A., null NovikovI.I.
Rok vydání: 2022
Zdroj: Semiconductors. 56:712
ISSN: 1726-7315
Popis: The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with InP leads to falling of integrated photoluminescence intensity, however, laser diodes with In0.53Ga0.31Al0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In0.53Ga0.27Al0.20As waveguide. Keywords: quantum well, molecular-beam epitaxy, photoluminescence, electroluminescence.
Databáze: OpenAIRE
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