A $V$ -band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology
| Autor: | Han-Nong Yeh, Hong-Yeh Chang, Shen-Ming Li |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
020206 networking & telecommunications Topology (electrical circuits) 02 engineering and technology Condensed Matter Physics Topology Frequency divider CMOS Phase noise 0202 electrical engineering electronic engineering information engineering Current-mode logic Electrical and Electronic Engineering Sensitivity (electronics) Microwave V band |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 28:76-78 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2017.2779754 |
| Popis: | A $V$ -band 90-nm CMOS divide-by-10 injection-locked frequency divider (ILFD) is proposed using current-reused topology in this letter. The proposed circuit is composed of a divide-by-5 ILFD and a source injection current-mode logic (SICML) divide-by-2 frequency divider. The cascoded topology of SICML and ILFD is employed to reduce dc power consumption and increase frequency division ratio. With an input power of 0 dBm, the measured maximum locking range (LR) is 5 GHz from 60.3 to 65.3 GHz. Compared with the reported CMOS microwave and millimeter-wave ILFDs, the proposed ILFD features wide LR, good sensitivity, and a high division ratio of up to ten. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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