Electron beam deposition of cobalt on the silicon substrate: Experiment and simulation
| Autor: | Alexander N. Saurov, Pavel E. L'vov, S. V. Bulyarskiy, Alexey I. Terentyev, Vyacheslav V. Svetukhin |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon Process Chemistry and Technology chemistry.chemical_element Flux Substrate (electronics) Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal Condensed Matter::Materials Science chemistry visual_art Materials Chemistry visual_art.visual_art_medium Cathode ray Deposition (phase transition) Growth rate Electrical and Electronic Engineering Instrumentation Cobalt |
| Zdroj: | Journal of Vacuum Science & Technology B. 39:064201 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/6.0001223 |
| Popis: | We explore the electron beam deposition of cobalt on a silicon substrate. The deposition has been studied in experiments at different electron beam powers. The temperature distribution over the metal surface has been calculated using the stationary heat conduction equation for a two-phase system. The obtained calculation results on the dependence of the film growth rate on electron beam power are in good agreement with our experimental data. We have shown that the film growth rate is limited by the flux of cobalt atoms on the film surface. |
| Databáze: | OpenAIRE |
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