Scale-up of the BaTiO3 ALD Process onto 200 mm Wafer

Autor:	Antti Rahtu, Markku Leskelä, Timo Hatanpää, Mikko Ritala, Marko Vehkamäki, Raija Matero, Suvi Haukka, Marko Tuominen
Rok vydání:	2006
Předmět:	Materials science business.industry SCALE-UP Process (computing) Optoelectronics Wafer business
Zdroj:	ECS Transactions. 1:137-141
ISSN:	1938-6737 1938-5862
Popis:	BaTiO3 films were deposited onto 200 mm silicon wafers by Atomic Layer Deposition (ALD) from barium bis(tris(tert-butyl) cyclopentadienyl) Ba(tBu3CpH2)2, titanium methoxide Ti(OMe)4 and water H2O. The films were characterized for thickness uniformity, stoichiometry and crystallinity. The thickness non- uniformity varied from 2.7 to 6.0% with different Ba(tBu3CpH2) 2 - H2O / Ti(OMe)4 - H2O cycle ratios. The most stoichiometric films were obtained with the 5:3 and 2:1 BaO:TiO2 cycling ratios. The as-deposited films were amorphous but were crystalline after thermal annealing. The study showed that this process can be transferred from small experimental scale to large production scale wafers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae85e412c57dd833cd87542deec44906 https://doi.org/10.1149/1.2209339 Zobrazit plný text záznamu