Electronic Assessment of Novel Arch-Shaped Asymmetrical Reconfigurable Field-Effect Transistor
| Autor: | Ziyu Liu, Xianglong Li, Yanling Shi, Xiaojin Li, Yabin Sun |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 67:1894-1901 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In this article, a novel arch-shaped asymmetrical reconfigurable field-effect transistor (RFET) has been proposed for the first time. By adding an arch-shaped source region in a silicon nanowire, the ON-state saturated current ( ${\mathrm {I}}_{ \mathrm{\scriptscriptstyle ON}}$ ) is found to raise about 6.72 times for the n-type and $5.39\times $ for the p-type, compared with conventional RFET. The tunneling and conduction mechanism is investigated in detail by 3-D technology computer aided design (TCAD) simulations. It is demonstrated that the geometry parameters of the arch-shaped source in our proposed asymmetrical RFET have a significant impact on the tunneling area, tunneling strength, and serial resistance. Moreover, the arch-shaped source is able to reduce the gate capacitance ( ${\mathrm {C}}_{\text {gg}}$ ) as well. The increased ${\mathrm {I}}_{ \mathrm{\scriptscriptstyle ON}}$ and the decreased ${\mathrm {C}}_{\text {gg}}$ lower the propagation delay decreased by 51.9% in basic combination logic applications. |
| Databáze: | OpenAIRE |
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