Field emission from gated silicon field emitter array induced by sub-nanosecond laser pulses
| Autor: | Mikio Takai, Hidetaka Shimawaki, Hidenori Mimura, Fujio Wakaya, Masayoshi Nagao, Yoichiro Neo |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Physics::Instrumentation and Detectors business.industry Hybrid silicon laser Field emitter array Physics::Optics chemistry.chemical_element 02 engineering and technology Electron 021001 nanoscience & nanotechnology Laser 01 natural sciences Computer Science::Other law.invention Field electron emission chemistry law Excited state 0103 physical sciences Optoelectronics 0210 nano-technology business Common emitter |
| Zdroj: | 2016 29th International Vacuum Nanoelectronics Conference (IVNC). |
| Popis: | Volcano-structured p-type silicon field emitter arrays have been fabricated by etch-back technique and investigated the photoresponse characteristics of electron emission excited by laser pulses. We have observed the current pulses from the device with the same response of the laser pulse. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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