PREPARATION AND PHOTOLUMINESCENCE PROPERTIES OF RF-SPUTTERED ZnO FILMS

Autor:	K. Tarigan, T. D. Canh, T. L. Phan, N. T. T. Lieu, N. X. Nghia
Rok vydání:	2015
Předmět:	Diffraction Photoluminescence Materials science business.industry Exciton Analytical chemistry Sputter deposition medicine.disease_cause medicine Optoelectronics Radio frequency business Excitation Ultraviolet Power density
Zdroj:	International Journal of Innovation in Mechanical Engineering and Advanced Materials. 1:32
ISSN:	2477-541X 2477-5428
Popis:	ZnO/Si films were prepared by radio frequency (RF) magnetron sputtering at room temperature. By optimizing the heat treatment conditions, we obtained a good quality film annealed at 700 ºC for longer 60 minutes. This process was monitored carefully by Raman scattering spectroscopy, and X-ray diffraction. The photoluminescence study on this film revealed that only ultraviolet emissions due to donor-acceptor pair (DAP), neutral acceptor-bound exciton (AºX) and donor-bound exciton (DºX) were observed. The intensity and peak position of these emissions depend on the measurement temperature and excitation power density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae64e85e5ce0fd60ecfe0621d4e42917 https://doi.org/10.22441/ijimeam.2015.1.006 Zobrazit plný text záznamu