Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
| Autor: | Wei-Chou Hsu, Yu-Shyan Lin, Dong-Hai Huang, Rong-Tay Hsu, Yue-Huei Wu, Yin-Kai Liao, Juin-Chin Huang |
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| Rok vydání: | 2006 |
| Předmět: |
Band gap
business.industry Transistor Direct current Heterojunction Electron High-electron-mobility transistor Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Ternary compound Materials Chemistry Indium phosphide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Semiconductor Science and Technology. 21:781-785 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/21/6/012 |
| Popis: | InP-based InAlAs/InxGa1?xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a ?-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively. |
| Databáze: | OpenAIRE |
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