The dependence of bottom electrode materials on resistive switching characteristics for HfO2/TiOx bilayer structure RRAM

Autor:	Zhongyuan Ma, Kunji Chen, Yang Sun, Huafeng Yang, Jian Liu, Xinfan Huang, Xinxin Zhang
Rok vydání:	2018
Předmět:	Inert Electrode material Materials science business.industry Bilayer Oxide Resistive random-access memory chemistry.chemical_compound chemistry Electrode Optoelectronics business Layer (electronics) Voltage
Zdroj:	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
DOI:	10.1109/icsict.2018.8565024
Popis:	In this paper, we systematically investigated the dependence of three types of bottom electrode (BE) materials, such as active Cu and Ag, inert Pt and Au, and oxygen-affinity W and Ti, on resistive switching characteristics for HfO 2 /TiO x bilayer structure RRAM devices with Pt served as the same top electrode (TE). It is found that the RRAM devices with oxygen-affinity BE (W or Ti) can significantly improve the fluctuations of main switching parameters compared to the other two types of BE. Moreover, the Reset processes in RRAM devices with oxygen-affinity BE exhibit gradual transition, which can be used to obtain multilevel storage capability. Thus, a reliable 2-Bit storage operation can be successfully obtain in Ti BE/HfO 2 /TiO x /Pt TE RRAM device by controlling the Reset-stop voltage. These results provide insights into the proper selection of oxide-based switching layer and electrode materials to improve the performance of the related RRAM devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae4ee0d55e5d62b5d6d3e3bcaf058b21 https://doi.org/10.1109/icsict.2018.8565024 Zobrazit plný text záznamu