Characterization of Silicon Nitride Capping Dielectrics on AlGaN/GaN/Silicon Substrate HEMT Structures with a Mercury Probe

Autor:	John Byrnes, Win Ye, G. Cueva, Wayne Mack Struble, Jonny Hoglund, Timothy E. Boles, Robert J. Hillard
Rok vydání:	2019
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Algan gan High-electron-mobility transistor Dielectric law.invention chemistry.chemical_compound Silicon nitride chemistry law Optoelectronics business Mercury probe Voltage
Zdroj:	2019 Compound Semiconductor Week (CSW).
Popis:	The characterization of High Electron Mobility Transistor (HEMT) structures is important for predicting device behavior, monitoring and developing processes and improving performance. This also includes measuring the quality of the top dielectric capping layer. The top capping dielectric and its' associated charges both in the dielectric and at the interface can induce shifts and instabilities in the HEMT device pinch-off voltage. In this paper, a highly repeatable and accurate, small area mercury gate is used to measure critical HEMT parameters earlier in the process and prior to final device formation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae2b436c0ef08b7f4d68abe88758d556 https://doi.org/10.1109/iciprm.2019.8819245 Zobrazit plný text záznamu