0.7–2.7-GHz 12-W Power-Amplifier MMIC Developed Using MLP Technology
Autor: | Inder J. Bahl |
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Rok vydání: | 2007 |
Předmět: |
Engineering
L band Radiation business.industry Amplifier Electrical engineering Condensed Matter Physics Power (physics) Ultra high frequency Broadband Hardware_INTEGRATEDCIRCUITS Electronic engineering S band Electrical and Electronic Engineering business Microwave Monolithic microwave integrated circuit |
Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 55:222-229 |
ISSN: | 0018-9480 |
DOI: | 10.1109/tmtt.2006.889151 |
Popis: | A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-band amplifier has exhibited greater than 12-W power output and better than 22% power-added efficiency over the 0.7-2.7-GHz frequency range. To our knowledge, these power results represent the state-of-the-art in multioctave high-power MMIC amplifiers |
Databáze: | OpenAIRE |
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