Advanced SiC Power Modules for 13.8 kV Power Distribution

Autor:	H. Hearne, Kathy Ha, Bettina Nechay, TY McNUTT, Thomas Roettger, Marc Sherwin, Kevin Motto, Robert S. Howell, Andy Walker, Steve Van Campen, Scott Leslie, Ranbir Singh, Jason Lai, Dustin Gutshall
Rok vydání:	2008
Předmět:	Engineering business.industry Power module Electrical engineering Electronic engineering Schottky diode Ocean Engineering Power substation business Power (physics)
Zdroj:	Naval Engineers Journal. 119:65-72
ISSN:	1559-3584 0028-1425
DOI:	10.1111/j.1559-3584.2007.00024.x
Popis:	Northrop Grumman Corporation has been developing 10 kV SiC MOSFETs and Junction Barrier Schottky diodes for application to a 13.8 kV 2.7 MVA solid-state power substation. The design of half-bridge power modules has extensively used simulation, from electron-level device simulations to the system-level trade studies, to develop the most efficient module for use in the SSPS.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae1f15fe8ca1d75e284b768acc8303b4 https://doi.org/10.1111/j.1559-3584.2007.00024.x Zobrazit plný text záznamu Plný text