Interface tailoring for adhesion enhancement of diamond-like carbon thin films
| Autor: | Ian G. Brown, Maria Cecília Barbosa da Silveira Salvadori, Fernanda de Sá Teixeira, W. W. R. Araujo, L. G. Sgubin |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon Diamond-like carbon Scanning electron microscope Mechanical Engineering chemistry.chemical_element Nanotechnology General Chemistry Substrate (electronics) Electronic Optical and Magnetic Materials symbols.namesake chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry symbols Silicon carbide Electrical and Electronic Engineering Thin film Raman spectroscopy Carbon |
| Zdroj: | Diamond and Related Materials. 25:8-12 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2012.02.005 |
| Popis: | We have explored the suitability and characteristics of interface tailoring as a tool for enhancing the adhesion of hydrogen-free diamond-like carbon (DLC) thin films to silicon substrates. DLC films were deposited on silicon with and without application of an initial high energy carbon ion bombardment phase that formed a broad Si–C interface of gradually changing Si:C composition. The interface depth profile was calculated using the TRIDYN simulation program, revealing a gradient of carbon concentration including a region with the stoichiometry of silicon carbide. DLC films on silicon, with and without interface tailoring, were characterized using Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scratch tests. The Raman spectroscopy results indicated sp3 -type carbon bonding content of up to 80%. Formation of a broadened Si:C interface as formed here significantly enhances the adhesion of DLC films to the underlying silicon substrate. |
| Databáze: | OpenAIRE |
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