30×40 cm2 flexible Cu(In,Ga)Se2 solar panel by low temperature plasma enhanced selenization process
Autor: | Hsu-Sheng Tsai, Yu Ting Yen, Jia-Min Shieh, Chang Hong Shen, Chia Ho Chang, Wen Chi Tsai, Tsung-Ta Wu, Cheng Hung Hsu, Yu-Lun Chueh |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science Renewable Energy Sustainability and the Environment Energy conversion efficiency 02 engineering and technology Substrate (electronics) Activation energy 021001 nanoscience & nanotechnology 01 natural sciences Copper indium gallium selenide solar cells Grain size Crystallinity Chemical engineering 0103 physical sciences General Materials Science Electrical and Electronic Engineering Thin film Inductively coupled plasma 0210 nano-technology |
Zdroj: | Nano Energy. 24:45-55 |
ISSN: | 2211-2855 |
Popis: | A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique, compared with hydrogen-assisted Se vapor selenization (HASVS) to achieve a large-area (30×40 cm2) Cu(In,Ga)Se2 (CIGS) solar panel with enhanced efficiencies from 10.8% to 13.2% (14.7% for active area), was demonstrated. The bonding of Se was partially broken by ICP plasma treatment and these Se radicals are helpful to enhance reaction activity for following selenization process at an extremely low temperature of 330 °C. The effects of plasma steps, plasma power, selenization temperature and optimized conditions were thoroughly studied in detail. The remarkable enhancement of the efficiency is ascribed to the better crystallinity, enlarged grain size, less Se vacancy and uniform depth distribution of Ga. From reaction kinetics point of view, PESVS provides extra energy to crack Se, resulting in the decrease in reaction activation energy. The PESVS methodology was also applied to low temperature (450 °C) selenized CIGS thin film solar panel with uniform conversion efficiency more than ~10%. Furthermore, a large-area flexible stainless steel substrate with remarkable conversion efficiency of ~6.8% without Na addition was demonstrated. We believed that this work can provide a facile approach of low temperature selenization on flexible substrate applications or fast selenization for throughput consideration, thus stimulating the mass-production in large scale CIGS PV industry. |
Databáze: | OpenAIRE |
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