3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines
| Autor: | Xiaoyan Liu, Liang Zhao, Rui Liu, H.-S. Philip Wong, Shimeng Yu, Peng Huang, Zhe Chen, Bin Gao, Jinfeng Kang, Yoshi Nishi, Zizhen Jane Jiang, Haitong Li, Hong-Yu Henry Chen, Lifeng Liu |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 62:3160-3167 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | 3-D resistive switching random access memory (RRAM) is a promising candidate for high-density nonvolatile memory applications, as well as for monolithic 3-D integration interleaved with logic layers. In this paper, we develop a methodology for assessing and optimizing large-scale 3-D RRAM arrays. A systematic study on the intrinsic switching behaviors and optimization of 3-D RRAM arrays is performed, combining device measurements and 3-D array simulations. The dependence of programming voltage on array size, cell location and pulse parameters, statistical properties of operating 3-D RRAM arrays, and subthreshold disturbance on RRAM cells is experimentally investigated. Optimization guidelines for the performance and reliability of 3-D RRAM arrays from device level to architecture level are presented: 1) an optimized 1/ $n$ architecture for 100-kb 3-D RRAM arrays can improve write margin by 69.6% and reduce energy consumption by 75.6% compared with a conventional full-size array design; 2) a strategy of prioritizing storage location for reliable operation is presented; and 3) an optimal hopping barrier of oxygen ions is found to improve array immunity to disturbance. |
| Databáze: | OpenAIRE |
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