Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

Autor:	Liyang Song, Franck Arnaud, Voon-Yew Thean, Yue Liang, Jie Chen, Jaeger Daniel, Huiming Bu, Philip J. Oldiges, Melanie J. Sherony, An L. Steegen, Joyce C. Liu, Dechao Guo, Michael P. Chudzik, Kathryn T. Schonenberg, Pranita Kulkarni, Mukesh Khare, William K. Henson, Unoh Kwon
Rok vydání:	2009
Předmět:	Electron mobility Digital subscriber line Materials science business.industry Gate dielectric Optoelectronics Microelectronics Dielectric business Metal gate Threshold voltage
Zdroj:	MRS Proceedings. 1194
ISSN:	1946-4274 0272-9172
Popis:	For the first time, we discuss the compatibility of stress proximity technique (SPT) with dual stress liner (DSL) in high-κ/metal gate (HK/MG) technology. The short-channel mobility enhancement and the drive current improvement brought by SPT have been demonstrated at 32nm technology node. With maintained short channel control and threshold voltage roll-off characteristics, SPT has achieved 7% drive current improvement for both nFET and pFET from the optimization of SPT with DSL.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae0b5601f231fb823a7e0f5c61c0d67c https://doi.org/10.1557/proc-1194-a04-02 Zobrazit plný text záznamu Full text from SpringerLink