Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

Autor:	P. Salmen, M.W. Feil, K. Waschneck, H. Reisinger, G. Rescher, I. Voss, M. Sievers, T. Aichinger
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronics Reliability. 135:114575
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2022.114575
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae065e9269329b1e3d878bc135c1f9b0 https://doi.org/10.1016/j.microrel.2022.114575 Zobrazit plný text záznamu Full Text from ScienceDirect