Suppression of twin generation in the growth of GaAs on Ge (111) substrates
| Autor: | H. Ichiba, Yasutomo Kajikawa, K. Ushirogouchi, Y. Son, H. Hayase, R. Mori, M. Irie |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science Condensed Matter::Other business.industry 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Condensed Matter::Materials Science Optics Condensed Matter::Superconductivity 0103 physical sciences Materials Chemistry AS2 Optoelectronics 0210 nano-technology business Layer (electronics) Beam (structure) Vicinal Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 477:40-44 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.12.062 |
| Popis: | The generation of rotational twins in the growth of GaAs and GaSb on Ge(111) substrates by molecular beam epitaxy has been characterized by X-ray diffraction. Rotational twins are shown to be less generated in GaSb than in GaAs. It has been demonstrated that the generation of rotational twins in GaAs can be suppressed by inserting GaSb as a buffer layer. It has also been demonstrated that the use of the As2 beam and vicinal surfaces is effective for suppressing twin generation in GaAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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