| Autor: |
J.W. Kunze, Marc Tiebout, Josef Hausner, C. Weyers, Daniel Kehrer, U. Langmann, Pierre Mayr, Domagoj Siprak |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 IEEE Radio Frequency Integrated Circuits Symposium. |
| DOI: |
10.1109/rfic.2008.4561500 |
| Popis: |
This paper presents novel MOS-transistor layouts for analog RF applications. Asymmetrical drain and source diffusion areas as well as their contacting metal stacks are adjusted to improve the transistor performance. These modifications allow for increased device currents and reduced parasitic wiring capacitances simultaneously. Ring oscillators with transistors of identical channel width and length fabricated in a 65 nm digital CMOS technology are used for verification. An increase of 14% in oscillation frequency compared to classical multi-finger layouts corroborates the improvement by these modifications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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