| Autor: |
Jae-Sung Roh, Sung Joo Hong, Donghee Son, Seung Hwan Lee, Moon-Sig Joo, Jinwon Park, Jaeyun Yi, Jae-yeon Lee, Sang-Min Hwang, Jungwoo Park, Sunghoon Lee, Ja-Yong Kim, Sung-Woong Chung, Sungki Park, Seok-Pyo Song, Hyejung Choi, Junghoon Rhee, Sangkeum Lee, Jiwon Moon, Suk-Ju Kim, Choi-Dong Kim |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 3rd IEEE International Memory Workshop (IMW). |
| DOI: |
10.1109/imw.2011.5873243 |
| Popis: |
In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO x , ZrO x and AlO x as a tunnel barrier were fabricated with 40 ~ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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