Design of VT-Sensitive Ring Oscillators for Monitoring Gate-TDDB Environmental Stress
| Autor: | Masaki Shimada, Takeshi Okagaki, Kan Takeuchi, Koji Shibutani |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Physics Inverse Time-dependent gate oxide breakdown Ring oscillator Ring (chemistry) 01 natural sciences Electronic Optical and Magnetic Materials Stress (mechanics) Logic gate Product (mathematics) 0103 physical sciences Electrical and Electronic Engineering Atomic physics Safety Risk Reliability and Quality Voltage |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 19:97-103 |
| ISSN: | 1558-2574 1530-4388 |
| Popis: | This paper discusses the design methodology of a voltage and temperature-sensitive ring oscillator (VT_RO), whose frequency has a similar dependence on voltages and temperatures as that of worn-out stress strength of a gate time-dependent dielectric breakdown (gate-TDDB). The VT_RO is used to monitor the accumulated environmental stress of gate-TDDB in reliability-oriented products, such as automotive microcontroller units. Therein, the VT_RO drives the on-chip stress counters during the product operations over the years. Three types of VT_ROs have been designed and compared, which have been fabricated by using 28 nm HKMG test chips; multi- ${V}_{{th}}$ VT_RO, single- ${V}_{{th}}$ VT_RO; and combinational use of both a voltage-sensitive ring oscillator and a temperature-sensitive ring oscillator. The measured frequencies of the three types of ring oscillators are in good agreement with the target model of power-law V dependency along with an exponential inverse ${T}$ dependency. The single- ${V}_{{th}}$ VT_RO seems most promising in terms of product applicability, design difficulty, and low power. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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