Negative luminescence at 3.9 µm in InGaAsSb-based diodes
| Autor: | G. N. Talalakin, S. A. Karandashev, M. A. Remennyi, M. Aidaraliev, B. A. Matveev, N. M. Stus, Nonna V. Zotova |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Energy conversion efficiency Atmospheric temperature range Electroluminescence Negative luminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Magnet Optoelectronics Charge carrier business Diode |
| Zdroj: | Semiconductors. 37:927-930 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Current-voltage characteristics, as well as spectral and power-current characteristics, for the emission of InAsSbP/InGaAsSb double-heterostructure diodes grown on InAs substrates were measured under forward and reverse biases in the temperature range of 25–90°C. It was shown that the conversion efficiency for negative luminescence, which occurs due to the extraction of charge carriers from the regions adjacent to the p-n junction at temperatures ∼90°C, is higher than the conversion efficiency for electroluminescence. Narrowing of the negative luminescence spectra in diodes with a built-in cavity was observed. |
| Databáze: | OpenAIRE |
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