Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs
| Autor: | Rui Liu, R. Fung, Sanghyeon Baeg, K. Lilja, Rick Wong, Jeffrey S. Kauppila, Yuanqing Li, M. Newton, Haibin Wang, M. Bounasser, Bharat L. Bhuva, L. Chen, Lloyd W. Massengill, S.-J. Wen |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Engineering 010308 nuclear & particles physics business.industry Transistor Electrical engineering Silicon on insulator Linear energy transfer Laser 7. Clean energy 01 natural sciences Upset law.invention Nuclear Energy and Engineering law Logic gate 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Absorption (electromagnetic radiation) Flip-flop |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:367-373 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2016.2630022 |
| Popis: | In this paper, a variety of flip-flop (FF) designs fabricated in a commercial 28-nm Fully-Depleted Silicon on Insulator (FDSOI) technology are evaluated for their single-event upset performance with ions and pulsed laser experiments. These FF designs consist of unhardened DFF, hardened DFF with stacked transistors in the inverters, and the layout-optimized DFFs. These DFFs were exposed to alpha particles and heavy ions (HIs). None of the hardened DFFs exhibit any errors up to a Linear Energy Transfer (LET) of 50 MeV*cm2/mg under normal irradiation, and a layout-based hardened DFF started to see errors at a LET of 50 MeV*cm2/mg with the tilt angle of 600. The testing data substantiates effective SEU reduction of these hardened designs. Two-photon absorption (TPA) laser experiments were carried to test these DFF designs, and the results showed that pulsed laser may not be a valid tool to evaluate the FFs designed with nano-scale SOI stacked structures. This brings new challenges in laser hardness assurance for RHBD designs. |
| Databáze: | OpenAIRE |
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