An improved packaging technology for RF power transistors

Autor:	P. Smith, N. Padfield, J. Walker, S. McCarthy
Rok vydání:	2005
Předmět:	Materials science Silicon Packaging engineering business.industry Thermal resistance Electrical engineering chemistry.chemical_element Inductance Thermal conductivity chemistry Optoelectronics Power semiconductor device Radio frequency Power MOSFET business
Zdroj:	IEEE MTT-S International Microwave Symposium Digest, 2005..
DOI:	10.1109/mwsym.2005.1516841
Popis:	This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ada25a56de18d2d98fae4ff8d7f2e080 https://doi.org/10.1109/mwsym.2005.1516841 Zobrazit plný text záznamu