Failure analysis of epoxy molded IC packages
Autor: | Kamil Janeczek, Grażyna Kozioł, K. Futera, Aneta Arazna |
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Rok vydání: | 2016 |
Předmět: |
Materials science
Mechanical engineering chemistry.chemical_element 02 engineering and technology Die (integrated circuit) law.invention law Aluminium 0202 electrical engineering electronic engineering information engineering Electronic engineering Electronics Electrical and Electronic Engineering Power MOSFET 020208 electrical & electronic engineering Epoxy 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Grinding chemistry visual_art Soldering visual_art.visual_art_medium Resistor 0210 nano-technology |
Zdroj: | Microelectronics International. 33:94-101 |
ISSN: | 1356-5362 |
DOI: | 10.1108/mi-07-2015-0063 |
Popis: | Purpose The aim of this paper is to present non-destructive and destructive methods of failure analysis of epoxy moulded IC packages on the example of power MOSFETs in SOT-227 package. Design/methodology/approach A power MOSFET in SOT-227 package was examined twice using X-ray inspection, at first as the whole component to check if it is damaged and then after removing the upper part of package by mechanical grinding. The purpose of the second X-ray inspection was to prepare images for estimation of the total number and approximate location of voids in soft solder layers. Finally, power MOSFETs were subjected to decapsulation process using a concentrated sulphuric acid to verify existence of damage areas noticed during X-ray analysis and to observe other possible failures such as cracks in aluminium metallization or wires deformation. Findings X-ray analysis was revealed to be adequate technique to detect damage (e.g. meltings) in power MOSFETs in SOT-227 package, but only when tested components were analysed in the side view. This type of analysis combined with a graphic software is also suitable for voids estimation in soft solder layers. Moreover, it was found that a single acid (concentrated sulphuric acid) at elevated temperature can be successfully used for decapsulation of power MOSFETs in SOT-227 package without damage of aluminium metallization and aluminium wires. Such decapsulation process enables analysis of defects in wire, die and package materials. Research limitations/implications Further investigations are required to examine if the presented methods of failures analysis can be used for other types of components (e.g. high power resistors) in similar packages. Practical/implications The described methods of failure analysis can find application in electronic industry to select components which are free of damage and in effect which allow to produce high reliable devices. Apart from it, the presented method is applicable to evaluate reasons of improper work of tested electronic devices and to identify faked components. Originality/value This paper contains valuable information for research and technical staff involved in the assessment of electronic devices who needs practical methods of failure analysis of epoxy moulded IC packages. |
Databáze: | OpenAIRE |
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