Low dark current P- InAsSbP /n- InAs/N-InAsSbP/n + - InAs double heterostructure back-side illuminated photodiodes
| Autor: | N. D. Il’inskaya, M.A. Remennyi, N.M. Stus, B. A. Matveev, Pavel N. Brunkov, N. G. Karpukhina, S. A. Karandashev, A.A. Usikova, A.A. Lavrov |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
Infrared business.industry Photodetector 02 engineering and technology Double heterostructure 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention 010309 optics Depletion region law Impurity 0103 physical sciences Optoelectronics 0210 nano-technology business Dark current Pyrometer |
| Zdroj: | Infrared Physics & Technology. 76:542-545 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2016.04.002 |
| Popis: | P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10−6 A/cm2, Vbias = −0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D 3.1 μ m ∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated. |
| Databáze: | OpenAIRE |
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