Impact of Extension Induced Fluctuation in FinFETs with Gate Underlap Structure

Autor:	P. Huang, Ya Wang, X. Y. Liu, Zhilong Xin, Y. Yang, Jinfeng Kang, Guojun Du
Rok vydání:	2013
Předmět:	Materials science Extension (metaphysics) Structure (category theory) Nanotechnology Engineering physics
Zdroj:	Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ad6d75b7f085594286c66b28e9c1fe49 https://doi.org/10.7567/ssdm.2013.ps-3-8 Zobrazit plný text záznamu