Temperature Dependence of InP-Based Avalanche Photodiodes
| Autor: | D.S.G. Ong, John P. R. David, Chee Hing Tan, L.J.J. Tan, Jo Shien Ng |
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| Rok vydání: | 2007 |
| Předmět: |
Avalanche diode
Materials science APDS Physics::Instrumentation and Detectors business.industry Astrophysics::Instrumentation and Methods for Astrophysics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Avalanche photodiode Avalanche breakdown Gallium arsenide law.invention Condensed Matter::Materials Science chemistry.chemical_compound Optics Single-photon avalanche diode chemistry law Optoelectronics business Absorption (electromagnetic radiation) Voltage |
| Zdroj: | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials. |
| ISSN: | 1092-8669 |
| Popis: | The temperature dependence of avalanche breakdown voltage of InP-based separate absorption multiplication avalanche photodiodes (SAM APDs) was investigated for the first time. The work investigated APDs with InGaAs absorber and InP or InAlAs multiplication region. Effects of SAM APD design parameters such as absorber width, multiplication region width, and electrical file profile on the avalanche breakdown voltage temperature dependence were studied. We also investigated the influence of multiplication region material (InP versus InAlAs) on temperature dependence of SAM APDs. |
| Databáze: | OpenAIRE |
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