A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region

Autor:	Ali A. Orouji, Dariush Madadi, Farshad Gholipour
Rok vydání:	2021
Předmět:	LDMOS Materials science law business.industry Transistor Optoelectronics High voltage business Electronic Optical and Magnetic Materials law.invention
Zdroj:	Silicon. 14:7075-7082
ISSN:	1876-9918 1876-990X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ad6975cbcf4b751d92e52f27f1a3f0f2 https://doi.org/10.1007/s12633-021-01435-3 Zobrazit plný text záznamu Full text from SpringerLink