| Autor: |
Harry Rieger, J. Naungayan, H. Siegert, S. M. Campeau, Richard M. Foster, C. M. Dozier, R. R. Whitlock, D. Fleming, I. C. E. Turcu, A. Stone, J. C. Carosella, Juan R. Maldonado, Kelly L. Cassidy, S. Mrowka, M. H. Lim, Z. Cheng, M. F. Powers, C. Kelsy, Peter Hark, Richard Forber, James H. Morris, Henry I. Smith, D. Gibson, R. Selzer, D. A. Newman, C. J. Gaeta, G. French, Jay Burdett |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:280 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.1539070 |
| Popis: |
A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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