Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
| Autor: | Jeong Hyun Moon, Myeong Sook Oh, Sun Young Kwon, Ho Keun Song, Han Seok Seo, Hyeong Joon Kim, Jong-Ho Lee, Jeong Hyuk Yim |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Schottky diode SBDS Condensed Matter Physics Reverse leakage current Mechanics of Materials Electronic engineering Breakdown voltage Optoelectronics General Materials Science Grain boundary Metalorganic vapour phase epitaxy business Ohmic contact Leakage (electronics) |
| Zdroj: | Materials Science Forum. :971-974 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.971 |
| Popis: | Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively. |
| Databáze: | OpenAIRE |
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