Phase interaction in GaAs contacts with group I metals and its relationship to the degradation of structures with a Schottky barrier

Autor:	V. G. Bozhkov, A. A. Yatis, V. M. Zavodchikov, K. V. Soldatenko, M. P. Yakubenya, I. V. Ivonin
Rok vydání:	1985
Předmět:	Materials science Condensed matter physics Hydrogen Scattering Schottky barrier General Physics and Astronomy chemistry.chemical_element Semiconductor device Condensed Matter::Materials Science symbols.namesake chemistry Phase (matter) X-ray crystallography symbols Rutherford scattering Diode
Zdroj:	Soviet Physics Journal. 28:704-709
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00895518
Popis:	The methods of Rutherford back scattering of helium ions and x-ray diffraction and electron microscope analysis are used to study phase interaction in GaAs contacts with layers of group I metals (Cu, Ag, Au) with annealings in a hydrogen atmosphere. The nature of the interaction and the mechanisms of degradation of the volt-ampere characteristics of Schottky barrier diodes are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ad4c06170e024037144ad1ba0e5d7c50 https://doi.org/10.1007/bf00895518 Zobrazit plný text záznamu Full text from SpringerLink