Growth of III-N/graphene heterostructures in single vapor phase epitaxial process
| Autor: | I. A. Eliseyev, Alexander N. Smirnov, W. V. Lundin, V. Yu. Davydov, L.K. Markov, M. A. Yagovkina, A. F. Tsatsul’nikov, E.Yu. Lundina, E. E. Zavarin, D. A. Zakheim, Pavel N. Brunkov, A. V. Sakharov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Graphene business.industry Nucleation Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences law.invention Inorganic Chemistry symbols.namesake law 0103 physical sciences Materials Chemistry Sapphire symbols Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business Raman spectroscopy Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 504:1-6 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2018.09.017 |
| Popis: | We investigated the growth of III-N/graphene heterostructures as a single process in a MOVPE reactor. Raman spectra revealed that graphene can be successfully deposited on sapphire substrate by propane pyrolysis if temperature exceeds 1060 °C and hydrogen is used as a carrier gas. GaN epitaxial layers and heterostructures on such graphene using both high-temperature AlN buffer layer and low-temperature GaN nucleation layer was demonstrated. Analysis of surface morphology and X-Ray diffraction curves indicate that GaN quality depends on graphene thickness. Use of copper electroplated Ni-based contact layer combined with thermal shock allows exfoliation of large-area III-N LED structures from sapphire. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect