Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering in Ar–O2 mixture
| Autor: | P.F. Hu, Y.M. Zhou, Z. Xie, H.N. Xiao, J. He |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Metallurgy Analytical chemistry Tantalum General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Microstructure Grain size Surfaces Coatings and Films chemistry Sputtering Impurity Electrical resistivity and conductivity Temperature coefficient |
| Zdroj: | Applied Surface Science. 258:1699-1703 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2011.10.012 |
| Popis: | The structure, composition, and temperature coefficient of resistance of tantalum films sputtered in Ar–O 2 mixture were studied as a function of deposition parameters and substrates temperature. As the sputtering power increased from 25 to 100 W, the samples deposited at 300 °C only consisted of the β phase, the preferred-growth orientation of films changed from (2 0 0) to (2 0 2) and the temperature coefficient of resistance reduced from −289.8 to −116.7 ppm/°C. The decrease of the oxygen and other impurity in the films was observed as the increase of the sputtering power. In addition, the O/Ta ratio decrease and grain size reduction in the films related to a change of electrical resistivity were observed at substrate temperatures in the range of 300–500 °C. These results suggested that the electrical properties were due to the oxygen and other impurity content and grain size in the films rather than to growth orientation. At 650 °C, the deposited films contained both partial stable body-centered-cubic α phase with low resistivity and tetragonal β phase of Ta. The presence of α phase of Ta causes a sharp decrease of the electrical resistivity and a significant change in the microstructure of the samples. |
| Databáze: | OpenAIRE |
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