Metal Schottky barrier contacts to alpha 6H‐SiC

Autor:	Y. C. Wang, Robert F. Davis, J. R. Waldrop, R. W. Grant
Rok vydání:	1992
Předmět:	chemistry.chemical_classification Photoemission spectroscopy Schottky barrier Analytical chemistry General Physics and Astronomy chemistry.chemical_element Mineralogy Crystal Metal chemistry Transition metal Aluminium visual_art visual_art.visual_art_medium Ohmic contact Inorganic compound
Zdroj:	Journal of Applied Physics. 72:4757-4760
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.352086
Popis:	Formation of Schottky barrier contacts to n‐type 6H‐SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H‐SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x‐ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current‐voltage and capacitance‐voltage techniques. The o/B values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H‐SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
Databáze:	OpenAIRE
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